SEMICONDUCTOR DEVICE SET
Price to win
From deduped DIBBS award lines (unit cost × quantity). Not a bid recommendation — observed history only.
Average unit cost
$47.44
Weighted average
$34.21
Weighted by quantity
Observed range
$24.95–$57.94
Coverage
5 awards
Nov 9, 1998 – Mar 25, 2014
Average: $47.44 · Weighted avg: $34.21 · Range: $24.95–$57.94 · Based on 5 awards, Nov 9, 1998–Mar 25, 2014.
Unit cost by award date · 5 priced lines
DIBBS award history
Distinct award lines for this NSN (deduped). Line total is unit cost × quantity.
5 distinct award lines
| Date | Manufacturer | Qty × unit | Total | Contract |
|---|---|---|---|---|
| Mar 25, 2014 | 3P167SEMITRONICS CORPFREEPORT, NYSAM | 30 × $55.85 | $1,676 | SPE7L114M0487 |
| Sep 5, 2013 | 14321PD&E ELECTRONICS, LLCNORTH HAMPTON, NHSAM | 43 × $57.94 | $2,491 | SPM7M613M2031 |
| Feb 28, 2013 | 3P167SEMITRONICS CORPFREEPORT, NYSAM | 31 × $49.00 | $1,519 | SPM7M613M1159 |
| Nov 26, 2007 | 14321PD&E ELECTRONICS, LLCNORTH HAMPTON, NHSAM | 62 × $49.44 | $3,065 | SPM7M108M0099 |
| Nov 9, 1998 | 5X304FALCON ELECTRONICS, LLCCOMMACK, NYSAM | 332 × $24.95 | $8,283 | SP096099M0791 |
Manufacturers who have won this NSN
Distinct CAGEs with a confirmed DIBBS award line for this part — each opens the manufacturer page.
Approved manufacturers
Qualified to supply per MCRL — no confirmed DIBBS award on record for this NSN. Each CAGE opens the manufacturer page.
PN A2X2033
PN A2X2033
PN QSCH-1459
PN QSCH-1459
PN DSB 1037
PN A3006760-1
PN JANTX1N5711
PN 4E598
Characteristics
FLIS item characteristics from PUB LOG identification.
| Characteristic | Value |
|---|---|
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| COMPONENT NAME AND QUANTITY | SEMICONDUCTOR DEVICE DIODE 4 |
| END ITEM IDENTIFICATION | 5895-01-177-0791 RECEIVER-TRANSMITTER |
| FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE |
| INTERNAL CONFIGURATION | ALL SEMICONDUCTOR DEVICE DIODE JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | ALL SEMICONDUCTOR DEVICE DIODE PN |
| MATERIAL | ENCLOSURE ALL SEMICONDUCTOR DEVICE DIODE GLASS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | ALL SEMICONDUCTOR DEVICE DIODE CELSIUS JUNCTION 200.0 |
| MOUNTING METHOD | ALL SEMICONDUCTOR DEVICE DIODE TERMINAL |
| OVERALL DIAMETER | ALL SEMICONDUCTOR DEVICE DIODE INCHES MINIMUM 0.068 AND INCHES MAXIMUM 0.076 |
| OVERALL LENGTH | ALL SEMICONDUCTOR DEVICE DIODE INCHES MINIMUM 0.150 AND INCHES MAXIMUM 0.170 |
| POWER RATING PER CHARACTERISTIC | ALL SEMICONDUCTOR DEVICE DIODE MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION 250.0 |
| SEMICONDUCTOR MATERIAL | ALL SEMICONDUCTOR DEVICE DIODE SILICON |
| TERMINAL LENGTH | ALL SEMICONDUCTOR DEVICE DIODE INCHES MINIMUM 1.000 AND INCHES MAXIMUM 1.500 |
| TERMINAL TYPE AND QUANTITY | ALL SEMICONDUCTOR DEVICE DIODE UNINSULATED WIRE LEAD 2 |
| TEST DATA DOCUMENT | DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) 80063-A3006760 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | ALL SEMICONDUCTOR DEVICE DIODE MAXIMUM WORKING PEAK REVERSE VOLTAGE 50.0 |
Open buys
DIBBS · quotes by Sep 21, 2026 · UNRESTRICTED
